Method for reducing diffusion through ferromagnetic materials

ABSTRACT

A method and apparatus are disclosed for inhibiting diffusion of mobile atoms from an antiferromagnetic layer toward a tunnel oxide layer and through a ferromagnetic layer which is pinned by the antiferromagnetic layer. Diffusion of the mobile atoms is inhibited by an oxide layer provided between the anti-ferromagnetic layer and the ferromagnetic layer. Alternatively, the ferromagnetic layer can have boron atoms located on or in the layer to fill interstices.

FIELD OF THE INVENTION

[0001] The invention relates to an MRAM (magnetic random access memory)cell which inhibits the undesirable diffusion of mobile materials suchas manganese.

BACKGROUND OF THE INVENTION

[0002] Production of MRAM devices requires high-temperature processingwhich in some cases can exceed 200° C. During such processing, it ispossible for mobile materials such as manganese (Mn) which is used in anantiferromagnetic layer to diffuse along grain boundaries to a tunneloxide region. Such diffusion lowers reliability and performance of theMRAM device. Consequently, a method for producing MRAM devices whichinhibits the diffusion of mobile materials is desired.

BRIEF SUMMARY OF THE INVENTION

[0003] In one aspect, the invention provides an MRAM device having upperand lower conducting layers, an anti-ferromagnetic layer connected tothe upper conducting layer, a first ferromagnetic layer connected to theanti-ferromagnetic layer, wherein the first ferromagnetic layer is apinned layer, a tunnel layer connected to the pinned layer; and a secondferromagnetic layer connected to said tunnel layer and to the lowerconducting layer, where the second ferromagnetic layer is a free layerand an barrier layer is introduced between the antiferromagnetic layerand the tunnel layer, or introduced within the ferromagnetic layers. Inanother aspect of the invention, the first and second ferromagneticlayers are infused with boron. In yet another aspect of the invention, amethod of fabricating the above components is disclosed.

[0004] These and other features and advantages of the invention will bemore clearly seen from the following detailed description of theinvention which is provided in connection with the accompanyingdrawings.

BRIEF DESCRIPTION OF THE DRAWINGS

[0005]FIG. 1 is a block diagram of a conventional MRAM memory cell;

[0006]FIG. 2 is a block diagram of an MRAM memory cell of the presentinvention;

[0007]FIG. 3 is a block diagram of a further modification to the MRAMmemory cell of FIG. 1;

[0008]FIG. 4 is a block diagram of another MRAM cell of the presentinvention;

[0009]FIG. 5 is a block diagram of a modification to the MRAM cell ofFIG. 4;

[0010]FIG. 6 is a schematic diagram of the present invention employedwithin a processor circuit; and

[0011]FIG. 7 is a block diagram of an MRAM memory cell of the presentinvention.

DETAILED DESCRIPTION OF THE INVENTION

[0012] A conventional MRAM memory cell 100 is shown in FIG. 1, in whicha magnetic structure 112 of the cell 100 has upper and lower conduitslayers 104 and 108, which are shown as being composed of tantalum (Ta),although other conductive materials may also be used. The magneticstructure 112 includes a ferromagnetic pinned layer 116 which is“pinned” by an anti-ferromagnetic layer 120 in contact withferromagnetic layer 116. The pinned layer has a magnetic field which isalways fixed (or pinned) in a single direction by the anti-ferromagneticlayer 120. The pinned layer 116 is shown in FIG. 1 as being composed ofNiFe (Nickel Ferrite); however, it could also be composed of CoFe(Ferrous Cobalt), or CrFe (Chromium Ferrite). An anti-ferromagneticlayer 120 is located near the pinned layer 116. The memory cell 100 alsoincludes a tunnel oxide layer 124, typically formed of aluminum oxide(Al₂O₃) in contact with ferromagnetic layer 100 and a secondferromagnetic layer 128 in contrast with the tunnel oxide layer 124. Thesecond ferromagnetic layer can flip, or change magnetic orientation,which is how the memory cell 100 is programmed to store a ‘1’ or a ‘0’logic state. The resistance of the cell 100 changes depending on thedirection of orientation of the ferromagnetic layer 128, which is alsoknown as the ‘free’ or ‘sense’ layer. Write currents are applied to theconduction layers 104 and 108 to flip the sense layer 128 to aparticular magnetic orientation. The sense layer 128 will hold itsorientation until additional write currents are applied, so that theMRAM cell 100 holds a binary value indefinitely, and does not requirerefresh and is nonvolatile.

[0013] When one or more IrMn (iridium manganese) layers are used to pinlayer 116, manganese atoms tend to diffuse through the pinned layer 116to the tunnel region 124 during high temperature processing of a wafercontaining memory cell 100. This diffusion, shown by the arrows in FIG.1, changes the electrical switching characteristics of the MRAM memorycell 100 during a read operation.

[0014] As shown in FIG. 2, a slight oxidation layer 204 is formed on topof the pinning layer 116, which serves as a barrier to mobile Mn atoms.Alternatively, as shown in FIG. 7, a slight oxidation layer 204 may beformed within the pinning layer 116. An oxide layer 204 which is 2-5Angstroms thick is sufficient to stop the movement of Mn along grainboundaries to the tunnel oxide layer 124. Such an oxide would not needto be uniform in consistency, but should be thin enough so as to notconsume too much of the ferromagnetic film 208. Making the oxide 204 toothick will affect the coupling between the pinned layer 116 and theanti-ferromagnetic layer 120. The oxide 204 can be produced from anickel iron oxide or cobalt iron oxide by either an exposure to oxygenor with the aid of plasma. The antiferromagnetic layer 120 can then bedeposited on the thin oxide barrier 204 and provide pinning for theunderlying ferromagnetic layer 116.

[0015] The advantage of oxidizing the ferromagnetic layer 116 is thatsuch layers will remain ferromagnetic or become slightlyantiferromagnetic upon oxidation, and thus will not drastically reducethe coupling of the antiferromagnetic layers with the ferromagneticlayers.

[0016] Another embodiment of the invention is shown in FIG. 3. In thisembodiment, the diffusion of Mn along grain boundaries is blocked bymaterials which are added to the ferromagnetic material and bond tothose grain boundaries and thereby effectively plug up the interstices.As shown in FIG. 3, boron (B) is one element that can accomplish suchplugging. Boron can be applied to the layer 304 by sputtering,annealing, or by implanting the layer 304 with Boron ions. Boron has theadvantage that small amounts can be added to ferromagnetic materialswithout changing their magnetic behavior. Boron also assists in makingthe ferromagnetic material amorphous. Consequently, the addition of athin oxide at the ferromagnetic interface such as the oxide 204 shown inthe FIG. 2 embodiment is not necessary. Because the thin oxide 204 neednot be employed, the magnetic coupling between the antiferromagnetic 120and ferromagnetic 116 layers remains consistent.

[0017] Another type of MRAM cell 400 (FIG. 4) uses a Ruthinium layer 408for “fine-tuning” the magnetic properties of the pinned layer 404. Withthis structure, exchange coupling between the two ferromagnetic layers412 and 414 occurs. Through application of the Ru layer 408, theexchange coupling can be adjusted and calibrated. Also, the strongcoupling through the Ruthenium forces the ferromagnetic layers 412 and414 to be antiparallel thus forming an antiferromagnet from theRuthenium layer 408.

[0018] The oxide layer can also be employed in the FIG. 4 structure, inthe manner shown in FIG. 5. Thus, an oxide layer 504 is added to theMRAM cell 400 to inhibit diffusion of Mn atoms toward oxide layer 124.Although FIG. 5 shows the oxide layer 504 being located between thelayers 412 and 408, the oxide layer 504 could alternatively be locatedbetween layers as shown by arrows A, C, and D. Additionally, the oxidelayer could be located within the ferromagnetic layers 412, 414 as shownby the arrows E and F.

[0019]FIG. 6 illustrates an exemplary processing system 600 which mayutilize an electronic device comprising an MRAM device 100 constructedin accordance with any of the embodiments of the present inventiondisclosed above in connection with FIGS. 2, 3 and 5. The processingsystem 600 includes one or more processors 601 coupled to a local bus604. A memory controller 602 and a primary bus bridge 603 are alsocoupled the local bus 604. The processing system 600 may includemultiple memory controllers 602 and/or multiple primary bus bridges 603.The memory controller 602 and the primary bus bridge 603 may beintegrated as a single device 606.

[0020] The memory controller 602 is also coupled to one or more memorybuses 607. Each memory bus accepts memory components 608 which includeat least one memory device 610 of the present invention. The memorycomponents 608 may be a memory card or a memory module. Examples ofmemory modules include single inline memory modules (SIMMs) and dualinline memory modules (DIMMs). The memory components 608 may include oneor more additional devices 609. For example, in a SIMM or DIMM, theadditional device 609 might be a configuration memory, such as a serialpresence detect (SPD) memory. The memory controller 602 may also becoupled to a cache memory 605. The cache memory 605 may be the onlycache memory in the processing system. Alternatively, other devices, forexample, processors 601 may also include cache memories, which may forma cache hierarchy with cache memory 605. If the processing system 600include peripherals or controllers which are bus masters or whichsupport direct memory access (DMA), the memory controller 602 mayimplement a cache coherency protocol. If the memory controller 602 iscoupled to a plurality of memory buses 616, each memory bus 616 may beoperated in parallel, or different address ranges may be mapped todifferent memory buses 607.

[0021] The primary bus bridge 603 is coupled to at least one peripheralbus 610. Various devices, such as peripherals or additional bus bridgesmay be coupled to the peripheral bus 610. These devices may include astorage controller 611, an miscellaneous I/O device 614, a secondary busbridge 615, a multimedia processor 618, and an legacy device interface620. The primary bus bridge 603 may also coupled to one or more specialpurpose high speed ports 622. In a personal computer, for example, thespecial purpose port might be the Accelerated Graphics Port (AGP), usedto couple a high performance video card to the processing system 600. Inaddition to memory device 631 which may contain a buffer device of thepresent invention, any other data input device of FIG. 6 may alsoutilize a buffer device of the present invention including the CPU 601.

[0022] The storage controller 611 couples one or more storage devices613, via a storage bus 612, to the peripheral bus 610. For example, thestorage controller 611 may be a SCSI controller and storage devices 613may be SCSI discs. The I/O device 614 may be any sort of peripheral. Forexample, the I/O device 614 may be an local area network interface, suchas an Ethernet card. The secondary bus bridge may be used to interfaceadditional devices via another bus to the processing system. Forexample, the secondary bus bridge may be an universal serial port (USB)controller used to couple USB devices 617 via to the processing system600. The multimedia processor 618 may be a sound card, a video capturecard, or any other type of media interface, which may also be coupled toone additional devices such as speakers 619. The legacy device interface620 is used to couple legacy devices, for example, older styledkeyboards and mice, to the processing system 600. In addition to memorydevice 631 which may contain a buffer device of the invention, any otherdata input device of FIG. 6 may also utilize a buffer device of theinvention, including a CPU 601.

[0023] The processing system 600 illustrated in FIG. 6 is only oneexemplary processing system with which the invention may be used. WhileFIG. 6 illustrates a processing architecture especially suitable for ageneral purpose computer, such as a personal computer or a workstation,it should be recognized that well known modifications can be made toconfigure the processing system 600 to become more suitable for use in avariety of applications. For example, many electronic devices whichrequire processing may be implemented using a simpler architecture whichrelies on a CPU 601 coupled to memory components 608 and/or memorybuffer devices 304. These electronic devices may include, but are notlimited to audio/video processors and recorders, gaming consoles,digital television sets, wired or wireless telephones, navigationdevices (including system based on the global positioning system (GPS)and/or inertial navigation), and digital cameras and/or recorders. Themodifications may include, for example, elimination of unnecessarycomponents, addition of specialized devices or circuits, and/orintegration of a plurality of devices.

What is claimed as new and desired to be protected by Letters Patent ofthe United States is:
 1. A magnetic random access memory device,comprising: a first ferromagnetic layer; an anti-ferromagnetic layermagnetically coupled to and pinning said first ferromagnetic layer; saidanti-ferromagnetic layer containing atoms which may diffuse through saidfirst ferromagnetic layer; a second ferromagnetic layer, said secondferromagnetic layer being a free layer; a tunnel oxide layer separatingsaid first and second ferromagnetic layers; and a barrier material forinhibiting diffusion of said atoms through said first ferromagneticlayer.
 2. The device of claim 1, wherein said barrier material comprisesan oxide layer located between said first ferromagnetic layer and saidanti-ferromagnetic layer.
 3. The device of claim 1, wherein said barriermaterial comprises an oxide layer located within said firstferromagnetic layer.
 4. The device of claim 2, wherein said oxide layerhas a thickness of about 2 A° to about 5 A°.
 5. The device of claim 1,wherein said barrier material comprises atoms of boron on or within saidfirst ferromagnetic layer.
 6. The device of claim 5, wherein boron atomsfill interstices of said first ferromagnetic layer to prevent diffusionof said atoms through said first ferromagnetic layer.
 7. The device ofclaim 1, wherein said first ferromagnetic layer is divided into firstand second sections, with a layer of Ruthinium located therebetween. 8.The device of claim 7, further comprising: an oxide layer, locatedbetween said first section and said antiferromagnetic layer.
 9. Thedevice of claim 7, further comprising: an oxide layer, located withinsaid first section.
 10. The device of claim 7, further comprising: anoxide layer, located between said first section and said ruthiniumlayer.
 11. The device of claim 7, further comprising: an oxide layer,located between said second section and said ruthinium layer.
 12. Thedevice of claim 7, further comprising: an oxide layer, located betweensaid second section and said tunnel oxide layer.
 13. A magnetic randomaccess memory device, comprising: a first ferromagnetic layer; ananti-ferromagnetic layer magnetically coupled to and pinning said firstferromagnetic layer; said anti-ferromagnetic layer containing atomswhich may diffuse through said first ferromagnetic layer; a secondferromagnetic layer, said second ferromagnetic layer being a free layer;a tunnel oxide layer separating said first and second ferromagneticlayers; and a barrier material for inhibiting diffusion of said atomsthrough said first ferromagnetic layer wherein said barrier materialcomprises an oxide layer located between said first ferromagnetic layerand said antiferromagnetic layer.
 14. The device of claim 13, whereinsaid antiferromagnetic layer comprises iridium manganese.
 15. The deviceof claim 13, wherein said first and second ferromagnetic layers comprisenickel ferrite.
 16. The device of claim 13, wherein said first andsecond ferromagnetic layers comprise ferrous cobalt.
 17. A magneticrandom access memory device, comprising: a first ferromagnetic layer; ananti-ferromagnetic layer magnetically coupled to and pinning said firstferromagnetic layer; said anti-ferromagnetic layer containing atomswhich may diffuse through said first ferromagnetic layer; a secondferromagnetic layer, said second ferromagnetic layer being a free layer;a tunnel oxide layer separating said first and second ferromagneticlayer; and a barrier material for inhibiting diffusion of said atomsthrough said first ferromagnetic layer, wherein said barrier materialcomprises atoms of boron on or within said first ferromagnetic layer.18. The device of claim 17, wherein said antiferromagnetic layercomprises iridium manganese.
 19. The device of claim 17, wherein saidfirst and second ferromagnetic layers comprise nickel ferrite.
 20. Thedevice of claim 17, wherein said first and second ferromagnetic layerscomprise ferrous cobalt.
 21. A magnetic random access memory device,comprising: a first ferromagnetic layer divided into first and secondsections, with a layer of Ruthinium located therebetween; ananti-ferromagnetic layer magnetically coupled to and pinning said firstferromagnetic layer; said anti-ferromagnetic layer containing atomswhich may diffuse through said first ferromagnetic layer; a secondferromagnetic layer, said second ferromagnetic layer being a free layer;a tunnel oxide layer separating said first and second ferromagneticlayers; and a barrier oxide layer for inhibiting diffusion of said atomsthrough said first ferromagnetic layer.
 22. The device of claim 21,wherein said barrier oxide layer is located between said first sectionand said anti-ferromagnetic layer.
 23. The device of claim 21, whereinsaid barrier oxide layer is located between within said first section.24. The device of claim 21, wherein said barrier oxide layer is locatedbetween said first section and said ruthinium layer.
 25. The device ofclaim 21, wherein said barrier oxide layer is located between saidsecond section and said ruthinium layer.
 26. The device of claim 21,wherein said barrier oxide layer is located within said second section.27. The device of claim 21, wherein said barrier oxide layer, locatedbetween said second section and said tunnel oxide layer.
 28. The deviceof claim 21, wherein said antiferromagnetic layer comprises iridiummanganese.
 29. The device of claim 21, wherein said first and secondferromagnetic layers comprise nickel ferrite.
 30. The device of claim21, wherein said first and second ferromagnetic layers comprise ferrouscobalt.
 31. A method of fabricating an magnetic memory device,comprising: forming a first ferromagnetic layer on top of said firstconducting layer; forming a tunnel oxide layer over said firstferromagnetic layer; forming a second ferromagnetic layer over saidtunnel oxide layer; forming an anti-ferromagnetic layer over said secondferromagnetic layer, said anti-ferromagnetic layer containing atomswhich may diffuse through said second ferromagnetic layer to said tunneloxide layer; and forming a barrier to inhibit diffusion of said atomsthrough said second ferromagnetic layer.
 32. The method of claim 31,wherein the step of forming said barrier comprises forming an oxidelayer between said pinned layer and said anti-ferromagnetic layer. 33.The method of claim 31, wherein the step of forming said barriercomprises forming an oxide layer within said pinned layer.
 34. Themethod of claim 31, wherein the step of forming said barrier comprisesproviding boron on or in said second ferromagnetic layer.
 35. The methodof claim 31, wherein said step of forming said barrier comprisessputtering boron onto said second ferromagnetic layer.
 36. The method ofclaim 31, wherein said step of forming said barrier comprises providinga layer of boron on said second ferromagnetic layer and annealing saidsecond ferromagnetic layer.
 37. The method of claim 31, wherein saidstep of forming said barrier comprises implanting said secondferromagnetic layer with boron ions.
 38. The method of claim 31, furthercomprising: forming said pinned layer as first and second sections; andforming a layer of Ruthinium between said first and second sections. 39.The method of claim 38, further comprising: forming an oxide layerbetween said first section and said antiferromagnetic layer.
 40. Themethod of claim 38, further comprising: forming an oxide layer withinsaid first section.
 41. The method of claim 38, further comprising:forming an oxide layer between said first section and said ruthiniumlayer.
 42. The method of claim 38, further comprising: forming an oxidelayer between said second section and said ruthinium layer.
 43. Themethod of claim 38, further comprising: forming an oxide layer withinsaid second section.
 44. The method of claim 38, further comprising:forming an oxide layer between said second section and said tunnel oxidelayer.
 45. A processor circuit, comprising a processor; and an memorydevice for exchanging data with said processor; said memory devicecomprising at least one magnetic memory cell, said memory cellcomprising: a first ferromagnetic layer; an anti-ferromagnetic layermagnetically coupled to and pinning said first ferromagnetic layer; saidanti-ferromagnetic layer containing atoms which may diffuse through saidfirst ferromagnetic layer; a second ferromagnetic layer, said secondferromagnetic layer being a free layer; a tunnel oxide layer separatingsaid first and second ferromagnetic layers; and a barrier material forinhibiting diffusion of said atoms through said first ferromagneticlayer.
 46. The device of claim 45, wherein said barrier materialcomprises an oxide layer located between said first ferromagnetic layerand said anti-ferromagnetic layer.
 47. The device of claim 46, whereinsaid oxide layer has a thickness of about 2 A° to about 5 A°.
 48. Thedevice of claim 45, wherein said barrier material comprises atoms ofboron on or within said first ferromagnetic layer.
 49. The device ofclaim 48, wherein boron atoms fill interstices of said firstferromagnetic layer to prevent diffusion of said atoms through saidfirst ferromagnetic layer.
 50. The device of claim 45, wherein saidfirst ferromagnetic layer is divided into first and second sections,with a layer of Ruthinium located therebetween.
 51. The device of claim50, further comprising: an oxide layer, located between said firstsection and said antiferromagnetic layer.
 52. The device of claim 50,further comprising: an oxide layer, located between said first sectionand said ruthinium layer.
 53. The device of claim 50, furthercomprising: an oxide layer, located within said first section.
 54. Thedevice of claim 50, further comprising: an oxide layer, located betweensaid second section and said ruthinium layer.
 55. The device of claim50, further comprising: an oxide layer, located between said secondsection and said tunnel oxide layer.
 56. The device of claim 50, furthercomprising: an oxide layer, located within said second section.